OSI Laser Diode Introduces Low-Noise, High-Sensitivity, High-Speed, 30 µm InGaAs Avalanche Photodiode

Edison, NJ, May 23, 2014 –(PR.com)– OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduces the latest detector in the avalanche photodiode (APD) family, the LAPD 1550-30R. The low-noise, high-sensitivity, 30 µm indium gallium arsenide (InGaAs) mesa structure joins the company’s 75 and 200 µm APD series. The high speed LAPD 1550-30R operates at 3.5 GHz and features a broad voltage breakdown (Vbr) curve of 30 V (minimum) to 40 V (maximum) with a typical response of 37 volts.

Ideal for applications in range-finding, optical time-domain reflectometers (OTDRs), and high-sensitivity line receivers, the LAPD 1550-30R is housed in a hermetically-sealed 3-pin, TO46 package with a lens cap. OSI Laser Diode’s low noise, 30 micron InGaAs APD module is RoHS compliant and operates from 1260 nm to 1650 nm with a typical operational wavelength at 1550 nm. The operating temperature ranges from -40 degrees to 85 degrees C, with a non-operating, storage temperature range from -40 degrees to 100 degrees C.

For more information about OSI Laser Diode’s LAPD 1550-30R for advanced detection applications, please visit www.laserdiode.com.

About the Company: OSI Laser Diode, Inc. (LDI), founded in 1967, is a global leader in laser diode technology, providing advanced optoelectronic products that serve the military/aerospace, telecom/datacom (short and long haul), commercial, industrial, and medical markets.